Nanoscale MOS transistors :
Esseni, D.
Nanoscale MOS transistors : semi-classical transport and applications / David Esseni, Pierpaolo Palestri, Luca Selmi. - Cambridge ; New York : Cambridge University Press, 2011. - xvii, 470 pages : illustrations ; 18 x 26 cm.
Includes bibliographical references and index.
Bulk semiconductors and the semi-classical model -- Quantum confined inversion layers -- Carrier scattering in silicon MOS transistors -- The Boltzmann transport equation -- The Monte Carlo method for the Boltzmann transport equation -- Simulation of bulk and SOI silicon MOSFETs; 8. MOS transistors with arbitrary crystal orientation -- MOS transistors with strained silicon channels -- MOS transistors with alternative materials.
"Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework Predictive capabilities of device models, discussed with systematic comparisons to experimental results"--
9780521516846 (hardback)
2010046886
Metal oxide semiconductors--Design and construction.
Electron transport
Nanoelectronics
Semiconductores de óxido metálico --Diseño y construcción
Transporte de electrones
Nanoelectrónica
621.381528
Nanoscale MOS transistors : semi-classical transport and applications / David Esseni, Pierpaolo Palestri, Luca Selmi. - Cambridge ; New York : Cambridge University Press, 2011. - xvii, 470 pages : illustrations ; 18 x 26 cm.
Includes bibliographical references and index.
Bulk semiconductors and the semi-classical model -- Quantum confined inversion layers -- Carrier scattering in silicon MOS transistors -- The Boltzmann transport equation -- The Monte Carlo method for the Boltzmann transport equation -- Simulation of bulk and SOI silicon MOSFETs; 8. MOS transistors with arbitrary crystal orientation -- MOS transistors with strained silicon channels -- MOS transistors with alternative materials.
"Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework Predictive capabilities of device models, discussed with systematic comparisons to experimental results"--
9780521516846 (hardback)
2010046886
Metal oxide semiconductors--Design and construction.
Electron transport
Nanoelectronics
Semiconductores de óxido metálico --Diseño y construcción
Transporte de electrones
Nanoelectrónica
621.381528