000			03841cam a22005175i 4500
999			_c3134
001			18303758
003			EC-UrYT
005			20230321133331.0
006			s||||gr|||| 00| 00
008			140912s2014 nyu 000 0 eng
010			_a 2014951156
020			_a9783662443613
020			_a9783662443620 (eBook)
040			_aEc-UrYT _bEc-UrYT _cEc-UrYT _erda _dDLC _dEC-UrYT
041			_aeng
042			_apcc
082	0	4	_223 _a537.6226
245	0	0	_aX-Ray absorption spectroscopy of semiconductors / _cClaudia S. Schnohr and Mark C. Ridgway, editors.
250			_aFirst Edition
263			_a1409
264	3	4	_aNew York : _bSpringer, _c2015.
300			_axvi, 361 pages : _billustrations ; _c24 cm.
490	0		_aSpringer series in optical sciences _v190.
505	2		_a1 Introduction to X-Ray Absorption Spectroscopy -- Part I Crystalline Semiconductors -- 2 Binary and Ternary Random Alloys -- 3 Wide Band Gap Materials -- 4 Dopants -- 5 Complexes and Clusters -- 6 Vibrational Anisotropy -- Part II Disordered Semiconductors -- 7 Amorphous Group IV Semiconductors -- 8 Amorphous Group III-V Semiconductors -- 9 Semiconductors Under Extreme Conditions -- Part III Semiconductor Nanostructures -- 10 Group IV Quantum Dots and Nanoparticles -- 11 Group IV Nanowires -- 12 Group III-V and II-VI Quantum Dots and Nanoparticles -- 13 Group III-V and II-VI Nanowires -- Part IV Magnetic Semiconductors -- 14 Magnetic Ions in Group IV Semiconductors -- 15 Magnetic Ions in Group III-V Semiconductors -- 16 Magnetic Ions in Group II-VI Semiconductors.
520	3		_aX-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-situ measurements of the effects of temperature and pressure. Summarizing research in their respective fields, the authors highlight important experimental findings and demonstrate the capabilities and applications of the XAS technique. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.
650	2	4	_97418 _aX-ray spectroscopy
650	2	4	_92847 _aSemiconductors
650	2	4	_97419 _aAbsorption spectra
650	2	4	_97420 _aEspectroscopía de rayos X
650	2	4	_9103 _aSemiconductores
650	2	0	_aEspectro _97421
700	1		_97424 _aSchnohr, Claudia S. _eeditor
700	1		_97425 _aRidgway, Mark C. _eeditor
856	4	2	_3Publisher description _uhttp://www.loc.gov/catdir/enhancements/fy1413/2014951156-d.html
856	4	1	_3Table of contents only _uhttp://www.loc.gov/catdir/enhancements/fy1413/2014951156-t.html
906			_a0 _bibc _corignew _d2 _eepcn _f20 _gy-gencatlg
942			_2ddc _cLIBRO
955			_apc17 2014-09-12