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X-Ray absorption spectroscopy of semiconductors / Claudia S. Schnohr and Mark C. Ridgway, editors.

Colaborador(es): Tipo de material: TextoTextoIdioma: Inglés Series Springer series in optical sciences ; 190.Fecha de copyright: New York : Springer, 2015Edición: First EditionDescripción: xvi, 361 pages : illustrations ; 24 cmISBN:
  • 9783662443613
  • 9783662443620 (eBook)
Tema(s): Clasificación CDD:
  • 23 537.6226
Recursos en línea:
Contenidos parciales:
1 Introduction to X-Ray Absorption Spectroscopy -- Part I Crystalline Semiconductors -- 2 Binary and Ternary Random Alloys -- 3 Wide Band Gap Materials -- 4 Dopants -- 5 Complexes and Clusters -- 6 Vibrational Anisotropy -- Part II Disordered Semiconductors -- 7 Amorphous Group IV Semiconductors -- 8 Amorphous Group III-V Semiconductors -- 9 Semiconductors Under Extreme Conditions -- Part III Semiconductor Nanostructures -- 10 Group IV Quantum Dots and Nanoparticles -- 11 Group IV Nanowires -- 12 Group III-V and II-VI Quantum Dots and Nanoparticles -- 13 Group III-V and II-VI Nanowires -- Part IV Magnetic Semiconductors -- 14 Magnetic Ions in Group IV Semiconductors -- 15 Magnetic Ions in Group III-V Semiconductors -- 16 Magnetic Ions in Group II-VI Semiconductors.
Resumen: X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-situ measurements of the effects of temperature and pressure. Summarizing research in their respective fields, the authors highlight important experimental findings and demonstrate the capabilities and applications of the XAS technique. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.
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Tipo de ítem Biblioteca actual Signatura Copia número Estado Fecha de vencimiento Código de barras Reserva de ítems
Colección general Colección general Biblioteca Yachay Tech 537.6226 X1 2015 (Navegar estantería(Abre debajo)) Ej. 1 Disponible 005690
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1 Introduction to X-Ray Absorption Spectroscopy -- Part I Crystalline Semiconductors -- 2 Binary and Ternary Random Alloys -- 3 Wide Band Gap Materials -- 4 Dopants -- 5 Complexes and Clusters -- 6 Vibrational Anisotropy -- Part II
Disordered Semiconductors -- 7 Amorphous Group IV Semiconductors -- 8 Amorphous Group III-V Semiconductors -- 9 Semiconductors Under Extreme Conditions -- Part III Semiconductor Nanostructures -- 10 Group IV Quantum Dots and Nanoparticles -- 11 Group IV Nanowires -- 12 Group III-V and II-VI Quantum Dots and Nanoparticles -- 13 Group III-V and II-VI Nanowires -- Part IV Magnetic Semiconductors -- 14 Magnetic Ions in Group IV Semiconductors -- 15 Magnetic Ions in Group III-V Semiconductors -- 16 Magnetic Ions in Group II-VI Semiconductors.

X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-situ measurements of the effects of temperature and pressure. Summarizing research in their respective fields, the authors highlight important experimental findings and demonstrate the capabilities and applications of the XAS technique. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.

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