Toward quantum finFET / Weihua Han and Zhiming M.Wang, editors.
Contributor(s): Han, Weihua [editor] | Wang, Zhiming M [editor].Material type: BookSeries: Lecture notes in nanoscale science and technology 17.Copyright date: New York, NY : Springer Science+Business Media, LLC, 2013Edition: First Edition.Description: xi, 363 pages : illustrations ; 24 cm.ISBN: 9783319020204; 9783319020211 (eBook).Subject(s): Nanotechnology | Optical materials | Quantum electronics | Nanoscience | Nanotecnología | Materiales ópticos | Electrónica cuántica | NanocienciaDDC classification: 620.5
|Item type||Current location||Call number||Copy number||Status||Date due||Item holds|
|Libro académico||Biblioteca del Campus||620.5 T7373 2013 (Browse shelf)||Ej. 1||Available|
|Libro académico||Biblioteca del Campus||620.5 T7373 2013 (Browse shelf)||Ej. 2||Available|
|Libro académico||Biblioteca del Campus||620.5 T7373 2013 (Browse shelf)||Ej. 3||Available|
1 Simulation of Quantum Ballistic Transport in FinFETs -- 2 Model for Quantum Confinement in Nanowires and the Application of This Model to the Study of Carrier Mobility in Nanowire FinFETs -- 3 Understanding the FinFET Mobility by Systematic Experiments -- 4 Quantum Mechanical Potential Modeling of FinFET -- 5 Physical Insight and Correlation Analysis of Finshape Fluctuations and Work-Function Variability in FinFET Devices -- 6 Characteristic and Fluctuation of Multi-fin FinFETs -- 7 Variability in Nanoscale FinFET Technologies -- 8 Random Telegraph Noise in Multi-gate FinFET/Nanowire Devices and the Impact of Quantum Confinement -- 9 Investigations on Transport Properties of Poly-silicon Nanowire Transistors Featuring Independent Double-Gated Configuration Under Cryogenic Ambient -- 10 Towards Drain Extended FinFETs for SoC Applications -- 11 Modeling FinFETs for CMOS Applications -- 12 Enhanced Quantum Effects in Room-Temperature Coulomb Blockade Devices Based on Ultrascaled finFET Structure -- 13 Single-Electron Tunneling Transistors Utilizing Individual Dopant Potentials -- 14 Single-Electron Transistor and Quantum Dots on Graphene -- 15 Terahertz Response in Schottky Warp-Gate Controlled Single Electron Transistors.
This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design.